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US8229597B2 US13/246,013 US201113246013A US8229597B2 US 8229597 B2 US8229597 B2 US 8229597B2 US 201113246013 A US201113246013 A US 201113246013A US 8229597 B2 US8229597 B2 US 8229597B2 Authority US United States Prior art keywords air temperature fan cooling valve temperature hvac Prior art date 2011-09-27 Legal status (The legal status is an assumption and is not Cited by: 71Publish Year: 2012Author: Benjamin Trent BurtonUS6445606B1 - Secure poly fuse ROM with a power-on or on fujitsu bios vinafix Heat treatmentA secure one-time programmable (OTP) salicided poly fuse array (2×8) cells with a power-on or on-reset hardware security feature is proposed. The secure OTP which is based on a primitive building cell that includes a salicided poly fuse and a MOS switch, utilize the same building block of the un-secure larger OTP array. This includes an enhanced multistage track & latch sense amp, or fujitsu bios vinafix Heat treatmentUS5502838A - Temperature management for integrated fujitsu bios vinafix Heat treatmentUS5502838A US08/234,344 US23434494A US5502838A US 5502838 A US5502838 A US 5502838A US 23434494 A US23434494 A US 23434494A US 5502838 A US5502838 A US 5502838A Authority US United States Prior art keywords temperature microprocessors clock rate circuit control circuitry Prior art date 1994-04-28 Legal status (The legal status is an assumption and is not a legal conclusion.Cited by: 288Publish Year: 1995Author: Dan Kikinis
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A method of presenting a recommendation in a user interface for use in optimization operation of industrial assets. Digital twins are generated for a set of industrial assets. The digital twins include data structures representing estimated states of each of a plurality of subsystems of the set of industrial assets over a time period based on an application of simulations using cumulative fujitsu bios vinafix Heat treatmentSemiconductor memory device and manufacturing method fujitsu bios vinafix Heat treatmentSep 28, 2004 · A method of manufacturing a non-volatile semiconductor memory device which uses a high-dielectric material for gate insulation, the method comprising the steps of: forming a gate insulating film by depositing a mixture of a first oxide and a second oxide, the second oxide having a smaller bandgap than that of the first oxide; and applying a heat treatment to the gate insulating film Semiconductor memory device and manufacturing method fujitsu bios vinafix Heat treatmentA semiconductor memory device which more reliably retains electrons trapped in its charge-trapping regions. A high-dielectric gate insulating film is grown on a semiconductor substrate. This gate insu
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